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| DMC2004DWK COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features * * * * * * * * * * Low On-Resistance Low Gate Threshold Voltage VGS(th) < 1V Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Complementary Pair MOSFET Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 2) ESD Protected Gate "Green" Device (Note 3) Mechanical Data * * * * * * * * * SOT-363 NEW PRODUCT Case: SOT-363 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Terminal Connections: See Diagram Marking Information: See Page 7 Ordering & Date Code Information: See Page 7 Weight: 0.006 grams (approximate) D1 G2 S2 Q1 Q2 ESD protected TOP VIEW S1 G1 D2 TOP VIEW Internal Schematic Maximum Ratings N-CHANNEL - Q1 Characteristic Drain Source Voltage Gate-Source Voltage Drain Current (Note 1) @TA = 25C unless otherwise specified Symbol VDSS VGSS Value 20 8 540 390 Unit V V mA TA = 25C TA = 85C ID Maximum Ratings P-CHANNEL - Q2 Characteristic Drain Source Voltage Gate-Source Voltage Drain Current (Note 1) @TA = 25C unless otherwise specified Symbol VDSS VGSS Value -20 8 -430 -310 Unit V V mA TA = 25C TA = 85C ID Thermal Characteristics - Total Device Characteristic Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Notes: 1. 2. 3. @TA = 25C unless otherwise specified Symbol Pd RJA Tj, TSTG Value 250 500 -65 to +150 Unit mW C/W C Device mounted on FR-4 PCB. No purposefully added lead. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. DMC2004DWK Document number: DS31114 Rev. 4 - 2 1 of 8 www.diodes.com September 2007 (c) Diodes Incorporated DMC2004DWK Electrical Characteristics N-CHANNEL - Q1 Characteristic OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage (Note 4) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance @TA = 25C unless otherwise specified Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) |Yfs| VSD Ciss Coss Crss Min 20 0.5 200 0.5 Typ 0.4 0.5 0.7 Max 1 1 1.0 0.55 0.70 0.90 1.2 150 25 20 Unit V A A V mS V pF pF pF Test Condition VGS = 0V, ID = 10A VDS = 16V, VGS = 0V VGS = 4.5V, VDS = 0V VDS = VGS, ID = 250A VGS = 4.5V, ID = 540mA VGS = 2.5V, ID = 500mA VGS = 1.8V, ID = 350mA VDS =10V, ID = 0.2A VGS = 0V, IS = 115mA NEW PRODUCT VDS = 16V, VGS = 0V f = 1.0MHz Electrical Characteristics P-CHANNEL - Q2 Characteristic OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage (Note 4) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Notes: 4. Short duration pulse test used to minimize self-heating effect. @TA = 25C unless otherwise specified Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) |Yfs| VSD Ciss Coss Crss Min -20 -0.5 200 -0.5 Typ 0.7 1.1 1.7 Max -1.0 1.0 -1.0 0.9 1.4 2.0 -1.2 175 30 20 Unit V A A V mS V pF pF pF Test Condition VGS = 0V, ID = -250A VDS = -20V, VGS = 0V VGS = 4.5V, VDS = 0V VDS = VGS, ID = -250A VGS = -4.5V, ID = -430mA VGS = -2.5V, ID = -300mA VGS = -1.8V, ID = -150mA VDS =10V, ID = 0.2A VGS = 0V, IS = -115mA VDS = -16V, VGS = 0V f = 1.0MHz DMC2004DWK Document number: DS31114 Rev. 4 - 2 2 of 8 www.diodes.com September 2007 (c) Diodes Incorporated DMC2004DWK Q1, N-CHANNEL NEW PRODUCT ID, DRAIN CURRENT (A) 0 0 VDS, DRAIN SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics ID, DRAIN CURRENT (A) VGS, GATE SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics VGS(th), GATE THRESHOLD VOLTAGE (V) TA, AMBIENT TEMPERATURE (C) Fig. 3 Gate Threshold Voltage vs. Ambient Temperature ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance vs. Drain Current 10 ID, DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current ID, DRAIN-SOURCE CURRENT (A) Fig. 6 Static Drain-Source On-Resistance vs. Drain-Source Current vs. Gate Source Voltage DMC2004DWK Document number: DS31114 Rev. 4 - 2 3 of 8 www.diodes.com September 2007 (c) Diodes Incorporated DMC2004DWK Q1, N-CHANNEL, continued NEW PRODUCT TA, AMBIENT TEMPERATURE (C) Fig. 7 Static Drain-Source On-State Resistance vs. Ambient Temperature VSD, DRAIN-SOURCE VOLTAGE (V) Fig. 8 Reverse Drain Current vs. Source-Drain Voltage ID, DRAIN CURRENT (A) Fig. 9 Forward Transfer Admittance vs. Drain Current VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Capacitance DMC2004DWK Document number: DS31114 Rev. 4 - 2 4 of 8 www.diodes.com September 2007 (c) Diodes Incorporated DMC2004DWK Q2, P-CHANNEL -ID, DRAIN CURRENT (A) NEW PRODUCT 0 0 -VDS, DRAIN SOURCE VOLTAGE (V) Fig. 11 Typical Output Characteristics -ID, DRAIN CURRENT (A) -VGS, GATE SOURCE VOLTAGE (V) Fig. 12 Typical Transfer Characteristics -VGS(th), GATE THRESHOLD VOLTAGE (V) TA, AMBIENT TEMPERATURE (C) Fig. 13 Gate Threshold Voltage vs. Ambient Temperature -ID, DRAIN-SOURCE CURRENT (A) Fig. 14 Static Drain-Source On-Resistance vs. Drain Current 10 -ID, DRAIN-SOURCE CURRENT (A) Fig. 15 Static Drain-Source On-Resistance vs. Drain Current -ID, DRAIN-SOURCE CURRENT (A) Fig. 16 Static Drain-Source On-Resistance vs. Drain-Source Current vs. Gate Source Voltage DMC2004DWK Document number: DS31114 Rev. 4 - 2 5 of 8 www.diodes.com September 2007 (c) Diodes Incorporated DMC2004DWK Q2, P-CHANNEL, Continued NEW PRODUCT TA, AMBIENT TEMPERATURE (C) Fig. 17 Static Drain-Source On-State Resistance vs. Ambient Temperature -VDS, SOURCE-DRAIN VOLTAGE (V) Fig. 18 Reverse Drain Current vs. Source-Drain Voltage -ID, DRAIN CURRENT (A) Fig. 19 Forward Transfer Admittance vs. Drain Current -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 20 Typical Capacitance DMC2004DWK Document number: DS31114 Rev. 4 - 2 6 of 8 www.diodes.com September 2007 (c) Diodes Incorporated DMC2004DWK Ordering Information Part Number DMC2004DWK-7 Notes: (Note 5) Case SOT-363 Packaging 3000/Tape & Reel 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. NEW PRODUCT Marking Information CAB = Marking Code YM = Date Code Marking Y = Year ex: U = 2007 M = Month ex: 9 = September CAB Date Code Key Year Code Month Code Jan 1 2007 U Feb 2 Mar 3 2008 V Apr 4 May 5 YM 2009 W Jun 6 Jul 7 2010 X Aug 8 Sep 9 2011 Y Oct O Nov N 2012 Z Dec D Package Outline Dimensions A BC H K M J D F L SOT-363 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 0.40 H 1.80 2.20 J 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 8 0 All Dimensions in mm Suggested Pad Layout E E Dimensions Value (in mm) Z 2.5 G 1.3 X 0.42 Y 0.6 C 1.9 E 0.65 Z G C Y X DMC2004DWK Document number: DS31114 Rev. 4 - 2 7 of 8 www.diodes.com September 2007 (c) Diodes Incorporated DMC2004DWK NEW PRODUCT IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DMC2004DWK Document number: DS31114 Rev. 4 - 2 8 of 8 www.diodes.com September 2007 (c) Diodes Incorporated |
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